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MIL-PRF-19500-478 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5812, 1N5814, 1N5816, And R Versions, Jan, Jantx, Jantxv, Janhc, Jankc, And JansThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two product assurance levels are provided for die.

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MIL-PRF-19500/478K
* TABLE III. Groups B and C additional electrical end-point measurements. 1/ 2/ 3/ 4/ 5/
Step
Inspection
Symbol
Limits
Unit
Method
Conditions
Min
Max
trr
6/ 1.
Reverse recovery
4031
See table I, subgroup 4
1.5
ns
time
herein.
1/
Devices which exceed table I, subgroup 2 (group A) limits for this test shall not be accepted.
2/
The additional electrical measurement for group B inspections in table E-VIA (JANS) of MIL-PRF-19500 are as
follows: Subgroups 4 and 5, table III herein, step 1.
3/
The additional electrical measurement for group B inspections in table E-VIB (JAN, JANTX, and JANTXV) of
MIL-PRF-19500 are as follows: Subgroups 2 and 3, see table III herein, step 1.
4/
The additional electrical measurement for group C inspections in table E-VII of MIL-PRF-19500 is as follows:
Subgroup 6, table III, step1.
5/
The additional electrical measurement for group E inspections in table E-VII of MIL-PRF-19500 is as follows:
Subgroup 1, table III, step1.
6/
Step 4 applies to irradiated devices only.
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