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MIL-PRF-19500-478 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N5812, 1N5814, 1N5816, And R Versions, Jan, Jantx, Jantxv, Janhc, Jankc, And JansThis specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two product assurance levels are provided for die.

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MIL-PRF-19500/478K

Notes

Dimensions

Inches

Millimeters

Min

Max

Min

Max

.250

6.35

.250

6.35

.018

.065

0.46

1.65

.265

.424

6.74

10.77

CD1

.265

.437

6.74

11.10

.300

.405

7.62

10.28

.424

.437

10.77

11.10

.075

.175

1.91

4.44

OAH

.600

.800

15.24

20.32

4, 6

.422

.453

10.72

11.50

.078

1.98

�T

.066

.103

1.68

2.62

.163

.189

4.14

4.80

NOTES:

1. Dimensions are in inches.

2. Millimeter equivalents are given for general information only.

3. Angular orientation and contour of this terminal is undefined.

4. Pitch diameter .190-32 UNF-2A (coated) - .1697 (4.310 mm).

5. Length of incomplete or undercut threads of UD.

6. Anode for R suffix devices.

7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 1. Physical dimensions (DO-4).