An Integrated Publishing, Inc. Site

An Integrated Publishing Website

MIL-PRF-19500-553 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500. One level of product assurance is provided for each unencapsulated device type \(die\) as specified in MIL┬ûPRF┬û19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL�PRF�19500/553F

TABLE I. Group A inspection.

MIL�STD�750

Limits

Symbol

Unit

Inspection 1/

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical

2071

examination

Subgroup 2

�C/W

Thermal impedance

3101

See 4.3.1.2

2.0

ZθJC

IFM = 50 A (pk), pulsed (see 4.5.1)

VFM1

Forward voltage

4011

0.68

V (pk)

IFM = 5 A (pk), pulsed (see 4.5.1)

VFM2

0.50

V (pk)

VRM = 45 V (pk) pulsed (see 4.5.1)

IRM1

Reverse current

4016

1.5

mA (pk)

Subgroup 3

High temperature

operation

VRM = 45 V (pk) pulsed (see 4.5.1)

Reverse current leakage

4016

TJ = 175�C

220

mA (pk)

IRM2

TJ = 125�C

mA (pk)

IRM3

TC = �55�C

Low temperature

operation

VRM = 45 V (pk) pulsed (see 4.5.1)

IRM4

Reverse current leakage

4016

1.5

mA (pk)

IF = 5 A (pk) pulsed (see 4.5.1)

Forward voltage

4011

0.60

V (pk)

VFM3

Subgroup 4

Reverse current leakage

4016

Peak reverse energy test (see

2.0

A (pk)

IRM5

at peak reverse voltage

4.5.2)

VRSM = 54 V (pk), (alternate test

see 4.5.5).

VR = 5 V dc; f = 1 MHz,

Capacitance

4001

2,000

100 KHz ≤ f ≤ 1 MHz

See footnote at end of table.