MIL-PRF-19500-553 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500. One level of product assurance is provided for each unencapsulated device type \(die\) as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/553F

3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I herein.

3.7 Marking. Marking shall be in accordance with MIL�PRF�19500.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

Qualification inspection (see 4.2).

Screening (see 4.3).

Conformance inspection (see 4.4) and tables I and II.

4.2 Qualification. Qualification inspection shall be in accordance with MIL�PRF�19500 and as specified herein.

4.2.1 JANHC devices. Qualification for JANHC devices shall be in accordance with MIL�PRF�19500.

4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case

qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II

tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first

inspection lot to this revision to maintain qualification.