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MIL-PRF-19500-553 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL–PRF–19500. One level of product assurance is provided for each unencapsulated device type \(die\) as specified in MIL–PRF–19500.

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MIL­PRF­19500/553F
TABLE I. Group A inspection ­ Continued.
Limits
Symbol
Unit
Inspection 1/
Method
Conditions
Min
Max
Subgroup 5
Not applicable
Subgroup 6
IFSM = 600 A (pk); ten surges of
Forward surge
4066
tp = 8.3 ms each at 1 minute
intervals, superimposed on
IO = 22.5 A dc;
VRWM = rated VRWM (see 1.3);
TA = +100°C.
Electrical end-points
See subgroup 2 of this table.
Subgroup 7
Not applicable
1/
For sampling plan, see MIL­PRF­19500.
11



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