MIL-PRF-19500-553 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500. One level of product assurance is provided for each unencapsulated device type \(die\) as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/553F

4.3 Screening.

4.3.1 Screening of packaged devices (quality levels JANS, JANTXV, and JANTX only). The screening of

packaged devices shall be in accordance with table E�IV of MIL�PRF�19500, and as specified herein. The following

measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall

not be acceptable.

Screen

Measurement

(see table E�IV of

JANS level

JANTXV and JANTX levels

Condition C

3b (1)

Surge current, see 4.3.1.1

3c (2)

Thermal impedance, see 4.3.1.2

Not applicable

Reverse energy test (see 4.5.2), followed

9 (3)

by VFM1 and IRM1 of table I, subgroup 2.

Test method 1038 of MIL�STD�750, test

Not applicable

condition A; t = 48 hrs.

VFM1 and IRM1 of table I, subgroup 2;

Reverse energy test (see 4.5.2), followed by

11 (3)

ĆVFM1 = 0.05 V(pk), ĆIRM1 = �100 percent

VFM1 and IRM1 of table I, subgroup 2.

or 5 mA dc, whichever is greater.

Burn-in, see 4.3.1.3.

VFM1 and IRM1 of table I, subgroup 2;

13 (4)

ĆVFM1 = 0.05 V (pk), ĆIRM1 = �100 percent

ĆVFM1 = 0.05 V (pk), ĆIRM1 = �100 percent or

or 5 mA dc, whichever is greater.

5 mA dc, whichever is greater.

Scope display evaluation (see 4.5.3).

(1) Surge current shall precede thermal response. These tests shall be performed anytime after screen 3a and

before screen 10.

(2) Thermal impedance shall be performed any time after sealing provided temperature cycling (screen 3a) is

performed in accordance with MIL�PRF�19500, screen 3 prior to this thermal impedance. Quality levels

JANTX and JANTXV do not need to be repeated in screening requirements.

(3) IRM1 shall not be indicative of an open condition.

(4) All devices shall be subjected to the scope display evaluation test and reverse energy test.

4.3.1.1 Surge current. Surge current shall be performed in accordance with test method 4066 of MIL�STD�750,

with the following conditions: IFSM = 600 A, 6 surges, tp = 8.3 ms, 1/2 sine wave, or rectangular pulse of equivalent

IRMS, IO = 0, VRWM = 0, duty factor one percent minimum, TA = +25�C.