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MIL-PRF-19500-553 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL–PRF–19500. One level of product assurance is provided for each unencapsulated device type \(die\) as specified in MIL–PRF–19500.

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MIL­PRF­19500/553F
Temperature-Current Derating Curve
TC=25°C 1N6391
25
20
15
10
5
0
25
50
75
100
125
150
175
200
Sinewave Operation 50% Duty Cycle
Tc (ºC) (Case)
Thermal Resistance Junction to Case = 2.0ºC/W
NOTES:
1. All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will
intersect the appropriate power for the desired maximum TJ allowed.
2. Derate design curve constrained by the maximum junction temperature (TJ ≤ 175°C) and current rating
specified (see 1.3 herein.)
3. Derate design curves chosen at TJ ≤ 150°C, 125°C, and 110°C to show current rating where users want to
limit TJ in their application.
FIGURE 3. Temperature current derating curve.
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