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MIL-PRF-19500-553 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL–PRF–19500. One level of product assurance is provided for each unencapsulated device type \(die\) as specified in MIL–PRF–19500.

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MIL­PRF­19500/553F
Dimensions
Inches
Millimeters
Ltr
Min
Max
Min
Max
A
.167
.177
4.24
4.50
B
.175
.185
4.45
4.70
C
.012
.013
0.305
0.330
The metallization characteristics of the die are:
Anode (front):
Ag
Cathode (back):
Ag
NOTES:
1.  Dimensions are in inches. Millimeters are given for general information only.
2.  In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 2. Physical dimensions for JANC die (A version for JANHC).
3



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