MIL-PRF-19500-553 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500. One level of product assurance is provided for each unencapsulated device type \(die\) as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/553F

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 or 4 of this specification. This section

does not include documents cited in other sections of this specification or recommended for additional information or

as examples. While every effort has been made to ensure the completeness of this list, document users are

cautioned that they must meet all specified requirements of documents cited in sections 3 or 4 of this specification,

whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

�

Test Methods for Semiconductor Devices.

(Copies of these documents are available online at https://quicksearch.dla.mil.)

2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL�PRF�19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as

IH � heating current

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL�PRF�19500, figure 1 (DO�4), and figure 2 (die) herein.

3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL�PRF�19500,

3.4.2 Polarity. Devices in DO�4 package (see figure 1) shall have the cathode electrically connected to the stud

(term 2). The polarity of unpackaged JANHC die shall be as identified on figure 2.

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in paragraph 1.3, 1.4, and table I.