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MIL-PRF-19500-553 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL–PRF–19500. One level of product assurance is provided for each unencapsulated device type \(die\) as specified in MIL–PRF–19500.

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MIL­PRF­19500/553F
Rin = 50 ohms, 1 watt
Input pulse
VG = 10 volts
RS = 0.1 ohms, 1 watt
VCC ≈ 10 volts
RG = 50 ohms
P.W.≈ 30 µs
L = 260 µH
Duty cycle ≤ 1percent
T = IRF130/2N6756 or equivalent
PROCEDURES:
1.  With S open, adjust pulse width to test current of 2 amps across RS.
2.  Close S, verify test current with current sense.
3.  Read peak output voltage (see 4.5.5).
FIGURE 4. Peak reverse energy test circuit.
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