MIL-PRF-19500-553 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500. One level of product assurance is provided for each unencapsulated device type \(die\) as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/553F

TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

Inspection

Sampling plan

Method

Conditions

45 devices

Subgroup 1

c=0

100 cycles, 0�C to 100�C.

Thermal shock

1056

Hermetic seal

1071

Electrical measurement

See table I, subgroup.

45 devices

Subgroup 2

c=0

Steady-state reverse

1038

Test condition A, t = 1,000 hours.

bias

Electrical measurement

See table I, subgroup 2.

Sample size N/A

Subgroup 4

Thermal impedance

curves

Subgroup 5

Not applicable

Subgroup 10

Condition A; TA = +25�C; IFSM = 600 A, 100 surges.

Surge

4066

22 devices

c=0

Electrical measurement

See table I, subgroup 2.