MIL-PRF-19500-553 Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, Jan, Jantx, Jantxv, Jans, And JanhcThis specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500. One level of product assurance is provided for each unencapsulated device type \(die\) as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/553F

4.3.1.2 Thermal impedance. Thermal impedance measurements shall be performed in accordance with test

method 3101 of MIL�STD�750. Read and record data shall be supplied to the qualifying activity on one lot (random

sample of 500 devices minimum) prior to shipment. Twenty-two samples shall be serialized and provided to the

qualifying activity for test correlation. The following conditions shall apply:

IH ≥ rated IO.

tH = 150 to 400 ms.

IM = 50 mA to 250 mA.

tMD = 50 to 300 �s.

The maximum limit for thermal impedance under these test conditions is ZθJC (max) = 2�C/W.

4.3.1.3 Burn-in. Burn-in shall be performed in accordance with test method 1038 of MIL�STD�750, with the

following conditions: Test condition A, TJ = +150�C minimum, VR = 36 V dc, t = 48 hrs.

4.3.2 Screening of unencapsulated die (JANHC). The screening of unencapsulated die shall be in accordance

with appendix G of MIL�PRF�19500 and as specified herein. Die shall be 100-percent probed in accordance with

table I, subgroup 2.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL�PRF�19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E�V of

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E�VIA (JANS) and table E�VIB (JAN, JANTX, and JANTXV) of MIL�PRF�19500, and as

follows. Electrical measurements (end-points) shall be VFM1 and IRM1 of table I, subgroup 2 herein.

4.4.2.1 Quality level JANS (table E�VIa of MIL�PRF�19500).

Subgroup

Method

Conditions

4066

IFSM = 600 A (pk); six surges of tp = 8.3 ms each at 1 minute intervals;

IO = 22.5 A dc; VR = rated (see 1.3); 100�C ≤ TC ≤ 125�C; TJ ≤ 150�C.

1037

2,000 cycles, 25 percent rated IO (see 4.5.6).

IF = 20 A average at TC = +130�C, for 340 hours, f = 60 Hz, VR = VRWM

1027

RΘJC = 2.0�C/W; tH ≥ 20 seconds; IH ≥ rated IO; tMD ≤ 300 �s;

4081

measurement current 50 mA ≤ IM ≤ 250 mA (see 4.5.4).