For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-586 Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817Ur-1, 1N5819-1, 1N5819Ur-1, 1N6761-1, And 1N6761Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated devices \(die\) as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


. . . . . . . . . . . .
MIL­PRF­19500/586L
4.4.2.2 Quality levels JAN, JANTX, and JANTXV (table E­VIB of MIL­PRF­19500).
Subgroup
Method
Conditions
0°C to +100°C, 10 cycles.
B2
1056
­55°C to +150°C, 25 cycles.
B2
1051
B2
4066
IFSM = 25 A (pk), condition A, IO = 1.0 A; TA = room ambient as defined in the
general requirements of MIL­STD­750 (see 4.5); 5 surges of tp = 8.3 ms each at 1
minute intervals.
IF = 1 A dc (minimum), adjust IF or TA to achieve TJ = +125°C minimum.
B3
1027
B4
2101
Decap analysis; scribe and break only, see 4.5.3.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E­VII of MIL­PRF­19500. Electrical measurements (end-points) shall be in accordance
with the applicable inspections of table I, subgroup 2 herein.
Subgroup
Method
Conditions
0°C to +100°C, 10 cycles.
C2
1056
­55°C to +150°C, 25 cycles.
C2
1051
C2
2036
Tension: Test condition A; weight = 12 pounds (5.44 kg); t = 15 s.
Lead fatigue: Test condition E; weight = 1 pound (0.45 kg).
NOTE: Neither tension nor lead fatigue are applicable for UR devices.
See 4.3.1.3; RθJL and RθJEC only.
C5
4081
IF = 1 A dc (minimum), adjust IF or TA to achieve TJ = +125°C minimum.
C6
1027
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with table E­IX of
MIL­PRF­19500 and the conditions for subgroup testing in table II herein. Electrical measurements (end-points)
shall be in accordance with the applicable inspections of table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.
4.5.1 Pulse response measurements. The conditions for pulse response measurement shall be as specified in
section 4 of MIL­STD­750.
4.5.2 Free air power burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided
that each device under test still sees the full Pt (minimum) and that the minimum applied voltage, where applicable, is
maintained through-out the burn-in period. Test method 3100 of MIL­STD­750 shall be used to measure TJ.
4.5.3 Decap internal visual scribe and break (DPA). Scratch glass at cavity area with diamond scribe. Carefully
snap open. Using 30X magnification, examine the area where die or bond material was in contact with the plug and
verify metallurgical bonding area.
10



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.