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MIL-PRF-19500-586 Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817Ur-1, 1N5819-1, 1N5819Ur-1, 1N6761-1, And 1N6761Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated devices \(die\) as specified in MIL-PRF-19500.

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MIL­PRF­19500/586L
TABLE I. Group A inspection.
Limits
Inspection 1/
Symbol
Unit
Method
Condition
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
Thermal impedance
3101
ZθJX
Forward voltage
4011
IF = .1 A (pk) pulsed (see 4.5.1)
VF1
1N5817-1, 1N5817UR-1
.32
V dc
1N5819-1, 1N5819UR-1
.34
V dc
1N6761-1, 1N6761UR-1
.38
V dc
Forward voltage
4011
IF = 1.0 A (pk) pulsed (see 4.5.1)
VF2
1N5817-1, 1N5817UR-1
.45
V dc
1N5819-1, 1N5819UR-1
.49
V dc
1N6761-1, 1N6761UR-1
.69
V dc
Forward voltage
4011
IFM = 3.1 A (pk) pulsed (see 4.5.1)
VF3
1N5817-1, 1N5817UR-1
.65
V dc
1N5819-1, 1N5819UR-1
.80
V dc
Reverse current leakage
4016
Pulse method
µA
VRM = 20 V (pk)
IR1
1N5817-1, 1N5817UR-1
70
µA
VRM = 45 V (pk)
1N5819-1, 1N5819UR-1
50
µA
VRM = 100 V (pk)
1N6761-1, 1N6761UR-1
100
Subgroup 3
TA = +100°C
High temperature operation:
Reverse current leakage
4016
Pulse method (see 4.5.1)
VRM = 20 V (pk)
IR2
1N5817-1, 1N5817UR-1
5.0
mA
VRM = 12 V (pk)
IR3
3.0
mA
VRM = 6 V (pk)
IR4
2.0
mA
VRM = 45 V (pk)
IR2
1N5819-1, 1N5819UR-1
5.0
mA
VRM = 40 V (pk)
IR3
4.5
mA
VRM = 35 V (pk)
IR4
4.0
mA
VRM = 24 V (pk)
IR5
3.5
mA
VRM = 12 V (pk)
IR6
2.5
mA
VRM = 6 V (pk)
IR7
2.0
mA
4016
Reverse current leakage
VRM = 100 V (pk)
IR2
1N6761-1, 1N6761UR-1
12.0
mA
VRM = 50 V (pk)
IR3
5.0
mA
VRM = 25 V (pk)
IR4
3.5
mA
VRM = 12 V (pk)
IR5
2.5
mA
See footnote at end of table.
11



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