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MIL-PRF-19500-586 Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817Ur-1, 1N5819-1, 1N5819Ur-1, 1N6761-1, And 1N6761Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated devices \(die\) as specified in MIL-PRF-19500.

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MIL�PRF�19500/586L

TABLE I. Group A inspection � Continued.

Limits

MIL�STD�750

Inspection 1/

Symbol

Unit

Method

Condition

Min

Max

Subgroup 3 - Continued

4011

Forward voltage

IF = 1.0 A (pk)

VF4

1N5817-1, 1N5817UR-1

.40

V dc

1N5819-1, 1N5819UR-1

Pulse method (see 4.5.1)

.45

V dc

1N6761-1, 1N6761UR-1

.64

V dc

TA = �55�C

Low temperature operation:

Forward voltage

4011

IF = 1.0 A (pk)

VF5

1N5817-1, 1N5817UR-1

.60

V dc

1N5819-1, 1N5819UR-1

Pulse method (see 4.5.1)

.65

V dc

1N6761-1, 1N6761UR-1

.80

V dc

Reverse current leakage

4016

�A

VRM = 20 V (pk)

1N5817-1, 1N5817UR-1

100

�A

VRM = 45 V (pk)

1N5819-1, 1N5819UR-1

200

�A

VRM = 90 V (pk)

1N6761-1, 1N6761UR-1

400

Subgroup 4

VR = 5 V dc, .01 ≤ f ≤ 1 MHz,

Capacitance

4001

VSIG = 15 mV p-p

1N5817-1, 1N5817UR-1

110

1N5819-1, 1N5819UR-1

1N6761-1, 1N6761UR-1

For sampling plan, see MIL�PRF�19500.

Electrical characteristics for all UR devices are identical to the corresponding axial leaded devices unless

otherwise specified.