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MIL-PRF-19500-586 Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817Ur-1, 1N5819-1, 1N5819Ur-1, 1N6761-1, And 1N6761Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated devices \(die\) as specified in MIL-PRF-19500.

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MIL­PRF­19500/586L
Dimensions
Symbol
Inches
Millimeters
Min
Max
Min
Max
A
.035
.039
0.89
0.99
B
.031
.033
0.79
0.84
Design data
Metallization:
Top (anode):
Al
Back (cathode):
Au
Al thickness
25,000 Å minimum
Ag thickness
4,000 Å minimum
Chip thickness
.010 ±.002 inch (0.254 ±0.051 mm)
FIGURE 3. Physical dimensions for unencapsulated die (A and B version for JANHC and JANKC).
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