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MIL-PRF-19500-586 Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817Ur-1, 1N5819-1, 1N5819Ur-1, 1N6761-1, And 1N6761Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated devices \(die\) as specified in MIL-PRF-19500.

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MIL�PRF�19500/586L
4.3 Screening.
4.3.1 Screening of packaged devices (JANTX, JANTXV and JANS levels only). Screening of packaged devices
shall be in accordance with table E�IV of MIL�PRF�19500, and as specified herein. The following measurements
shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be
acceptable.
Screen
Measurement
(see table E�IV of
JANS level
JANTXV and JANTX level
2
Not required
Not required
Not applicable
Not applicable
3b
3c (1)
Required (see 4.3.1.3)
Required (see 4.3.1.3)
4, 5, and 6
Not applicable
Not applicable
IR1 and VF2
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Not applicable
TA = +110�C; VRWM = 20 V(pk), 1N5817,
TA = +110�C; VRWM = 20 V(pk), 1N5817,
TA = +110�C; VRWM = 45 V(pk), 1N5819,
TA = +110�C; VRWM = 45 V(pk), 1N5819,
10 (2)
TA = +100�C; VRWM = 100 V(pk), 1N6761,
TA = +100�C; VRWM = 100 V(pk), 1N6761,
IO = 0, VR = VRWM
IO = 0, VR = VRWM
ĆIR1 ≤ 100 percent of initial reading or .02 mA,
IR1 and VF2
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whichever is greater.
ĆVF2 ≤ �50 mV dc
12
Subgroup 2 of table I herein;
Subgroup 2 of table I herein;
ĆIR1 ≤ 100 percent of initial reading or .02 mA,
ĆIR1 ≤ 100 percent of initial reading or .02 mA,
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whichever is greater; ĆVF2 ≤ �50 mV dc
whichever is greater; ĆVF2 ≤ �50 mV dc
(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in
accordance with table E-IV of MIL�PRF�19500, screen 3 prior to this thermal test.
(2) Test time shall be 48 hours minimum. TJ is not to exceed +115�C at VRWM. TJ is affected by the device
mounting thermal resistance when parasitic power is generated by the temperature dependent leakage current.
Until this leakage becomes significant near thermal runaway, TJ remains approximately equal to TA or TJ for IO
= 0.
4.3.1.1 JAN testing. JAN level product will have temperature cycling and thermal impedance testing performed in
accordance with MIL�PRF�19500, JANTX level screening level requirements.
4.3.1.2 Burn-in conditions. Burn-in conditions shall be as follows: IF = 1.0 A dc (minimum), adjust IF or TA to
achieve TJ = +100�C min. Mounting and test conditions shall be in accordance with method 1038 of
MIL�STD�750, test condition B.
4.3.1.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with
method 3101 or 4081 of MIL�STD�750 using the guidelines in that method for determining IM, IH, tH, tSW.
Measurement delay time (tMD) = 70 �s maximum. See table II group E, subgroup 4 herein.
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