MIL-PRF-19500-586 Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817Ur-1, 1N5819-1, 1N5819Ur-1, 1N6761-1, And 1N6761Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated devices \(die\) as specified in MIL-PRF-19500.

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MIL�PRF�19500/586L

TABLE II. Group E inspection (all quality levels) for qualification and re-qualification.

Inspection

Sampling

plan

Method

Conditions

45 devices

Subgroup 1

c=0

100 cycles 0�C to 100�C.

Thermal shock

1056

500 cycles -65�C to 150�C.

Temperature cycling

1051

Hermetic seal

1071

Test condition E.

Electrical measurement

See table I, subgroup 2.

45 devices

Subgroup 2

c=0

10,000 cycles, If = 1 A dc, Ton = Toff = 1 minute.

Intermittent operating life

1036

Electrical measurement

See table I, subgroup 2.

Subgroup 4

Thermal impedance curves

Sample size

N/A

Subgroup 5

Not applicable

Subgroup 6

11 devices

ESD

1020

Subgroup 8

45 devices

c=0

Resistance to glass cracking

1057

Test condition B. Test to destruction or 25 cycles max

whichever comes first.