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MIL-PRF-19500-586 Semiconductor Device, Diode, Silicon, Schottky Barrier, Types 1N5817-1, 1N5817Ur-1, 1N5819-1, 1N5819Ur-1, 1N6761-1, And 1N6761Ur-1, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for unencapsulated devices \(die\) as specified in MIL-PRF-19500.

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MIL­PRF­19500/586L
1N5817UR-1, 1N5819UR-1, 1N6761UR-1
TEC = 25°C
1N5819-1UR ss586 Tl=25C
Thermal Impedance Plots
100
10
1
0.1
0.0001
0.001
0.01
0.1
1
10
Time (s)
RθJEC = 40°C/W.
ZθJX = 10°C/W maximum at tH = 10ms.
FIGURE 11. Thermal impedance for 1N5817UR-1, 1N5819UR-1 and 1N6761UR-1 (DO­213AB).
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