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MIL-PRF-19500-587 Semiconductor Device, Diode, Silicon, Rectifier, Types 1N6661, 1N6662, 1N6663, 1N6661Us, 1N6662Us, And 1N6663Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for silicon diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/587E
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
examination
Subgroup 2
°C /W
See 4.3.1
Thermal impedance
3101
20
ZθJX
Forward voltage
4011
0.8
1.0
V dc
IF = 400 mA dc; 2 percent duty
VF1
cycle max, 8.3 ms max pulse
width; (pulsed, see 4.5.1)
Reverse current
4016
DC method
IR1
µA dc
1N6661, US
0.050
VR = 225 V dc
µA dc
1N6662, US
0.050
VR = 400 V dc
µA dc
1N6663, US
0.050
VR = 600 V dc
IR = 100 µA dc
Breakdown voltage
4021
VBR1
1N6661, US
270
V dc
1N6662, US
480
V dc
1N6663, US
720
V dc
Subgroup 3
TA = +150°C
High temperature
operation:
Forward voltage
4011
0.70
0.95
V dc
IF = 400 mA dc; 2 percent duty
VF2
cycle max, 8.3 ms max pulse
width; (pulses, see 4.5.1)
Reverse current
4016
DC method
IR2
µA dc
1N6661, US
25
VR = 225 V dc
µA dc
1N6662, US
25
VR = 400 V dc
µA dc
1N6663, US
25
V R = 600 V dc
See footnotes at end of table.
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