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MIL-PRF-19500-587 Semiconductor Device, Diode, Silicon, Rectifier, Types 1N6661, 1N6662, 1N6663, 1N6661Us, 1N6662Us, And 1N6663Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for silicon diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/587E
* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection 1/
MIL-STD-750
Sampling plan
Method
Conditions
Subgroup 1A
45 devices, c = 0
Thermal shock
1056
500 cycles
Hermetic seal
1071
Electrical measurements
See table I, subgroup 2.
Subgroup 2
22 devices, c = 0
VR = 80 percent of rated VRWM (see 1.3), Condition
Burn-in (blocking life)
1038
A
TA = 150°C; t = 1,000 hours min.
Electrical measurement
See table I, subgroup 2 and table III, step 2.
Subgroup 4
Thermal impedance curves
Subgroup 5
15 devices, c = 0
each type
*
Barometric pressure,
1001
Test condition D, 8 mmHg; t = 60 s
reduced (altitude operation)
Measurement during test:
Reverse current
4016
DC method
VR = 225 V dc; IR = .050 µA dc maximum.
1N6661, US
VR = 400 V dc; IR = .050 µA dc maximum.
1N6662, US
VR = 600 V dc; IR = .100 µA dc maximum.
1N6663, US
See footnote at end of table.
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