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MIL-PRF-19500-587 Semiconductor Device, Diode, Silicon, Rectifier, Types 1N6661, 1N6662, 1N6663, 1N6661Us, 1N6662Us, And 1N6663Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for silicon diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/587E
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VIA (JANS) and table E-VIB (JANTX and JANTXV) of MIL-PRF-19500.
Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2
herein. Delta requirements shall be in accordance with the applicable steps of table III herein.
4.4.2.1 Group B inspection, appendix E, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
0°C to +100°C, 25 cycles.
B3
1056
-55°C to +175°C, 100 cycles.
B3
1051
B3
4066
Condition A, IFSM = rated IFSM (see 1.3); 10 surges of 8.3 ms each at 1 minute
intervals, superimposed on IO = rated, VRWM = rated.
IO = 500 mA; f = 60 Hz, TA = +25°C ± 3°C; tON = tOFF = 3 minutes (minimum) for
B4
1037
2,000 cycles; mounting conditions in accordance with method 1026 of
MIL-STD-750 (see 4.5.3).
1N6661, US = VRM = 225 V(pk)
1N6662, US = VRM = 400 V(pk)
1N6663, US = VRM = 600 V(pk)
B5
1027
IO = 500 mA minimum, apply VR = rated VRWM (see 1.3 and, 4.5.3) adjust IO to
achieve TJ minimum; f = 50-60 Hz.
TA = + 55°C max. TJ = 175°C minimum; t = 1,000 hours. n = 45, c = 0.
B6
Not applicable.
Peak reverse power, PRM ≥ 100 W for square wave in accordance with test
B8
4065
method 4065 of MIL-STD-750 (314 W for half-sine wave). Test shall be
performed on each sublot; sampling plan n = 10, c = 0, end-points, see table I,
subgroup 2 herein.
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