MIL-PRF-19500-587 Semiconductor Device, Diode, Silicon, Rectifier, Types 1N6661, 1N6662, 1N6663, 1N6661Us, 1N6662Us, And 1N6663Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for silicon diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL-PRF-19500/587E

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only - Continued.

Inspection 1/

MIL-STD-750

Sampling plan

Method

Conditions

Subgroup 8

Peak reverse power

4065

Peak reverse power (PRM ) = shall be characterized

by the supplier and this data shall be available to

the Government. Test shall be performed on each

sublot.

Electrical measurement

During the PRM test, the voltage (VBR) shall be

monitored to verify it has not collapsed. Any

collapse in VBR during or after the PRM test, or rise

in leakage current (IR), after the test that exceeds

IR1 in table I shall be considered a failure to that

level of applied PRM. Progressively higher levels of

PRM shall be applied until failure occurs on all

devices within the chosen sample size to

characterize each sublot.

Subgroup 9

n = 45

1057

Test condition B. Step stress to destruction by

Resistance to glass cracking

increasing cycles or up to a maximum of 25 cycles.

Subgroup 10

22 devices, c = 0

Forward surge

4066

Condition A, IFSM = rated IFSM (see 1.3); ten surges

of 8.3 ms each at 1 minute intervals, IO = rated

(see 1.3), VRWM = rated (see 1.3).

Electrical measurement

See table I, subgroup 2.

1/ For sampling plan, see MIL-PRF-19500.