MIL-PRF-19500-587 Semiconductor Device, Diode, Silicon, Rectifier, Types 1N6661, 1N6662, 1N6663, 1N6661Us, 1N6662Us, And 1N6663Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for silicon diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/587E

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with appendix E, table

E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with

table I herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see appendix E,

Measurement

table E-IV of

JANS level

JANTX and JANTXV levels

MIL-PRF-19500)

Thermal impedance (see 4.3.1)

(1) 3c

VF1 IR1

Not applicable

VF1 IR1 ĆVF1 ĆIR1

VF1 IR1

See 4.3.2

Subgroups 2 and 3 of table I herein; ĆIR1

Subgroup 2 of table I herein; ĆIR1 ≤

(2) 13

≤ 100 percent of initial reading or �.010

100 percent of initial reading or �.010

�A dc whichever is greater. ĆVF1 ≤ �25

�A dc whichever is greater. ĆVF1 ≤25

mV dc. Scope display (see 4.5.2).

(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in

accordance with MIL-PRF-19500, screen 3 prior to this thermal test.

4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (VC and VH where

appropriate). Measurement delay time (tMD) = 70 �s max. The limit will be statistically derived. See table II, group

E, subgroup 4 herein.

4.3.2 Power burn-in conditions (method 1038, condition B (a) of MIL-STD-750). All devices shall be operated

under one of the following conditions (see 4.5.3).

TA = +125�C; f = 60 Hz

TA = +25�C; f = 60 Hz

TA = +25�C

Type

1N6661, US

VR = 225 V (pk); IO = 200 mA

VR = 225 V (pk); IO = 400 mA

IF (dc) = 400 mA

1N6662, US

VR = 400 V (pk); IO = 200 mA

VR = 400 V (pk); IO = 400 mA

IF (dc) = 400 mA

1N6663, US

VR = 600 V (pk); IO = 200 mA

VR = 600 V (pk); IO = 400 mA

IF (dc) = 400 mA