MIL-PRF-19500-590 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, 1N6626 Through 1N6631, 1N6626U Through 1N6631U, 1N6626Us Through 1N6631Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL-PRF-19500/590K

TABLE III. Groups B, and E delta measurements. 1/ 2/ 3/ 4/ 5/ 6/

Step

Inspection

Symbol

Limits 4/

Unit

Method

Conditions

Min

Max

ĆVFM1

�50 mV change from

Forward voltage change

4011

IFM = col. 5 of 1.4, pulsed

previous measured value

ĆIR1

Reverse current change

4016

VRM = col. 2 of 1.3

�A

1N6626 through

1N6631

1/ The delta measurements for group B, table E-VIA (JANS) of MIL-PRF-19500 are as follows: Subgroup 5, see

table III herein, steps 1 and 2.

2/ The delta electrical measurements for group B, table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500 are

as follows: subgroup 2, see table III herein, steps 1 and 2.

3/ The delta measurements for group E, table E-IX of MIL-PRF-19500 are as follows: Subgroup 1, see table III

herein, steps 1 and 2.

4/ See 1.4 herein.

5/ Devices which exceed table I, subgroup 2 (group A) limits for this test shall not be accepted.

6/ Also applies to U and US suffix versions.