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MIL-PRF-19500-597 Semiconductor Device, Transistors, Quad, Field Effect, N-Channel, Silicon, Type 2N7334, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each hermetic encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance are provided for each unencapsulated device type \(die\) as specified in MIL?√PRF?√19500.

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. . . . . . . . . .
MIL­PRF­19500/597G
4.4.2.2 Quality levels JAN, JANTX, and JANTXV (table E­VIB of MIL­PRF­19500).
Subgroup
Method
Conditions
B2
1051
Condition G.
B3
1042
Condition D, the heating cycle shall be 1 minute minimum.
B5 and B6
Not applicable.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E­VII of MIL­PRF­19500 and as follows herein. Electrical measurements (end-points) shall
be in accordance with table I, subgroup 2 herein.
Subgroup
Method
Conditions
C2
2036
Condition E: The sampling plan applies to the number of leads tested. A minimum
of three devices shall be tested.
C5
3161
C6
1042
Condition D, the heating cycle shall be 1 minute minimum.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E­IX of MIL­PRF­19500 and as specified in table II herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse response measurements. Conditions for pulse response measurement shall be as specified in section
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161
of MIL­STD­750. RθJA1 maximum = 90°C/W, for each die.
a.
IM measuring current
10 mA.
b.
IH drain heating current
0.15 A minimum.
c.
tH heating time
Steady-state (see method 3161 of MIL­STD­750 for definition).
d.
VH drain-source heating voltage
15 V minimum.
30 to 60 µs.
e.
tMD measurement time delay
10 µs maximum.
f.
tSW sample window time
10



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