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MIL-PRF-19500-597 Semiconductor Device, Transistors, Quad, Field Effect, N-Channel, Silicon, Type 2N7334, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each hermetic encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance are provided for each unencapsulated device type \(die\) as specified in MIL?√PRF?√19500.

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MIL­PRF­19500/597G
TABLE I. Group A inspection ­ Continued.
Limit
Inspection 1/
Unit
Symbol
Max
Min
Method
Conditions
Subgroup 7
Gate charge
3471
Condition B
Qg(on)
On-state gate charge
15
nC
Qgs
Gate to source charge
7.5
nC
Qgd
Gate to drain charge
7.5
nC
Condition A, di/dt = 100 A/µs, VDD
trr
Reverse recovery time
3473
200
ns
≤ 30 V dc; ID = ID1, (see 1.3)
1/
For sampling plan, see MIL­PRF­19500.
2/
This test is required for the following end-point measurement only (not intended for screen 9 or 11):
JANS, table E­VIA of MIL­PRF­19500, group B, subgroup 3; JAN, JANTX, and JANTXV, table E­VIB of
MIL­PRF­19500, group B, subgroup 2; and table E­VII of MIL­PRF­19500, group C, subgroup 2, and
table E­IX of MIL­PRF­19500, group E, subgroup 1.
3/
This test need not be performed in group A if performed in screening.
13



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