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MIL-PRF-19500-597 Semiconductor Device, Transistors, Quad, Field Effect, N-Channel, Silicon, Type 2N7334, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each hermetic encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance are provided for each unencapsulated device type \(die\) as specified in MIL?√PRF?√19500.

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MIL­PRF­19500/597G
4.3.1.1 Gate stress test. Apply VGS = +30 V minimum for t = 250 µs minimum.
4.3.1.2 Single pulse avalanche energy (EAS). The single pulse avalanche energy capability shall be determined in
accordance with method 3470 of MIL­STD­750. The following details shall apply:
a.
Peak current (IAS)
ID1.
b.
Peak gate voltage (VGS)
10 V.
25 ≤ RGS ≤ 200Ω.
c.
Gate to source resistor (RGS)
+25°C +10°C, ­5°C.
d.
Initial case temperature
2EAS VBR -VDD
e.
Inductance
mH minimum

(I  D1)2   VBR   
f.
Number of pulses to be applied
1 pulse minimum.
Supply voltage (VDD)
25 V minimum.
g.
4.3.1.3 Thermal impedance . The thermal impedance measurements shall be performed in accordance with
method 3161 of MIL­STD­750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where
appropriate). Measurement delay time (tMD) = 70 µs maximum. (See figure 5 herein for thermal response curves.)
See table II, group E, subgroup 4 herein.
4.3.2 Screening of unencapsulated die (JANHC and JANKC). Screening of JANHC and JANKC unencapsulated
die shall be in accordance with appendix G of MIL­PRF­19500. The burn-in duration for JANKC level shall follow the
JANS requirements; the JANHC level shall follow the JANTX requirements of table E­IV of MIL­PRF­19500. As a
minimum, die shall be 100 percent probed in accordance with group A.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL­PRF­19500, and as
specified herein. Alternate flow is allowed for quality conformance inspection in accordance with appendix E of
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E­V of
MIL­PRF­19500, and table I herein. End-point electrical measurements shall be in accordance with table I,
subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E­VIA (JANS) and table E­VIB (JAN, JANTX, and JANTXV) of
MIL­PRF­19500, and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2
herein.
4.4.2.1 Quality level JANS (table E­VIA of MIL­PRF­19500).
Subgroup
Method
Conditions
B3
1051
Condition G.
Gate stress; condition B, VGS = 80 percent of rated, TA = +175°C, t = 24 hours.
B5
1042
Reverse bias, condition A, VDS = 80 percent of rated, TA = +175°C, t = 120 hours.
B5
1042
9



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