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MIL-PRF-19500-597 Semiconductor Device, Transistors, Quad, Field Effect, N-Channel, Silicon, Type 2N7334, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each hermetic encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance are provided for each unencapsulated device type \(die\) as specified in MIL?√PRF?√19500.

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MIL­PRF­19500/597G
4.3 Screening.
4.3.1 Screening of packaged devices (quality levels JANS, JANTX and JANTXV only). Screening of packaged
devices shall be in accordance with table E­IV of MIL­PRF­19500, and as specified herein. The following
measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall
not be acceptable.
Screen
Measurement (1) (2)
(see table E­IV of
JANS level
JANTX and JANTXV levels
(3)
Gate stress test (see 4.3.1.1).
Gate stress test (see 4.3.1.1).
Method 3470 of MIL­STD­750, (see 4.3.1.2)
Method 3470 of MIL­STD­750, (see 4.3.1.2)
(3) (4)
optional.
optional.
3c (3)
Method 3161 of MIL­STD­750, (see 4.3.1.3).
Method 3161 of MIL­STD­750, (see 4.3.1.3).
IGSSF1, IGSSR1, IDSS1, see table I, subgroup 2
See table I, subgroup 2 herein.
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herein.
Method 1042 of MIL­STD­750,
Method 1042 of MIL­STD­750,
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test condition B.
test condition B.
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
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subgroup 2 of table I herein.
subgroup 2 of table I herein;
ĆIGSSF1 = ±20 nA dc or ±100 percent of initial
value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of initial
value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of initial
value, whichever Is greater.
Method 1042 of MIL­STD­750,
Method 1042 of MIL­STD­750,
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test condition A, t = 240 hours
test condition A.
Subgroup 2 of table I herein;
Subgroups 2 and 3 of table I herein;
ĆIGSSF1 = ±20 nA dc or ±100 percent of initial
ĆIGSSF1 = ±20 nA dc or ±100 percent of initial
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value, whichever is greater.
value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of initial
ĆIGSSR1 = ±20 nA dc or ±100 percent of initial
value, whichever is greater.
value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of initial
ĆIDSS1 = ±25 µA dc or ±100 percent of initial
value, whichever is greater.
value, whichever is greater.
ĆrDS(on)1 = ±20 percent of initial value.
ĆrDS(on)1 = ±20 percent of initial value.
ĆVGS(th)1 = ±20 percent of initial value.
ĆVGS(th)1 = ±20 percent of initial value.
(1)
At the end of the test program, IGSSF1, IGSSR1 and IDSS1 are measured.
An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1 and VGS(th)1 shall be invoked.
(2)
(3)
Shall be performed anytime before screen 9.
(4)
This test method in no way implies a repetitive avalanche energy rating. This test need not be performed in
group A when performed as a screen.
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