MIL-PRF-19500-597 Semiconductor Device, Transistors, Quad, Field Effect, N-Channel, Silicon, Type 2N7334, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each hermetic encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance are provided for each unencapsulated device type \(die\) as specified in MIL?√PRF?√19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL�PRF�19500/597G

Dimensions

Letter

Inches

Millimeters

Minimum

Maximum

Minimum

Maximum

.082

.092

2.08

2.34

.059

.069

1.49

1.75

.021

.031

0.53

0.78

.013

.023

0.33

0.58

.014

.024

0.35

0.61

.020

.030

0.51

0.76

NOTES:

1. Dimensions are in inches. Millimeters are given for general information only.

2. Unless otherwise specified, tolerance is � .005 inch (0.13 mm).

3. The physical characteristics of the die thickness are as follows: The back metals are chromium, nickel, and

silver (Cr, Ni, and Ag). The top metal is aluminum (Al).

4. The back contact of the die (not shown) is the drain.

5. Die thickness is .0187 inch (0.475 mm) �.001 inch (0.025 mm).

6. Dimensioning and tolerancing in accordance with ASME Y14.5.

FIGURE 2. Physical dimensions of die JANHCA and JANKCA (A version).