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MIL-PRF-19500-597 Semiconductor Device, Transistors, Quad, Field Effect, N-Channel, Silicon, Type 2N7334, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each hermetic encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance are provided for each unencapsulated device type \(die\) as specified in MIL?√PRF?√19500.

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MIL­PRF­19500/597G
TABLE I. Group A inspection ­ Continued.
Limit
Inspection 1/
Unit
Symbol
Max
Min
Method
Conditions
Subgroup 3 ­ Continued
VDS ≥ VGS, ID = 0.25 mA dc
VGS(th)2
Gate-to-source voltage
3403
1.0
V dc
(threshold)
TC = TJ = ­55°C
Low temperature operation:
VDS ≥ VGS, ID = 0.25 mA dc
VGS(th)3
Gate-to-source voltage
3403
5.0
V dc
(threshold)
Subgroup 4
ID = rated ID1, VGS = 10 V dc,
Switching time test
3472
Rg = 7.5Ω, VDD = 50 percent of
VBR(DSS)
td(on)
Turn-on delay time
20
ns
tr
Rise time
25
ns
td(off)
Turn-off delay time
40
ns
tf
Fall time
40
ns
Subgroup 5
EAS
Single pulse unclamped
3470
See 4.3.1.2, n = 116, c = 0
inductive switching 3/
Electrical measurements
See subgroup 2 of this table
VDS = 80 percent of rated VBR(DSS),
Safe operating area test
3474
ID = .25 A, tp = 10 ms,
for power MOSFETs
Electrical measurements
See subgroup 2 of this table
Subgroup 6
Not applicable
See footnotes at end table.
12



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