MIL-PRF-19500-597 Semiconductor Device, Transistors, Quad, Field Effect, N-Channel, Silicon, Type 2N7334, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for quad N-channel, enhancement-mode, MOSFET, power transistor with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each hermetic encapsulated device type as specified in MIL?√PRF?√19500. Two levels of product assurance are provided for each unencapsulated device type \(die\) as specified in MIL?√PRF?√19500.

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MIL�PRF�19500/597G

TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only. 1/

MIL�STD�750

Inspection

Sample plan

Method

Conditions

45 devices

Subgroup 1

c=0

Temperature cycling

1051

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2.

45 devices

Subgroup 2 2/

c=0

Steady-state reverse bias

1042

Condition A, 1,000 hours.

Electrical measurements

See table I, subgroup 2.

Steady-state gate bias

1042

Condition B, 1,000 hours

Electrical measurements

See table I, subgroup 2.

Subgroup 4

Sample size N/A

Thermal impedance curves

See MIL�PRF�19500.

Subgroup 5

Not applicable

Subgroup 6

11 devices

Electrostatic discharge

1020

sensitivity

Subgroup 11

22 devices

c=0

Test procedure for measuring

3476

Test conditions shall be derived by the

dv/dt during reverse recovery

manufacturer.

of power MOSFET transistors

JANHC and JANKC devices are qualified in accordance with appendix G of MIL�PRF�19500.

A separate sample for each test may be selected.