INCHPOUND
The documentation and process conversion
measures necessary to comply with this revision
MILPRF19500/598C
shall be completed by 28 July 2014.
28 January 2014
SUPERSEDING
MILPRF19500/598B
5 November 2003
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT,
P-CHANNEL AND N-CHANNEL, SILICON, TYPE 2N7336,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MILPRF19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for quad N-channel and P-channel,
enhancement- mode, MOSFET, power transistor, with avalanche energy ratings (EAS and EAR) and maximum
avalanche current (IAR). Four levels of product assurance are provided for each device type as specified in
1.2 Physical dimensions. The device package style is as follows: 14 pin dual-in line package (MO036AB) in
accordance with figure 1.
1.3 Maximum ratings. Unless otherwise specified TA = +25°C.
PT (1)
ID2 (2)
VGS
ID1 (2) (3)
EAS
EAR
Top and TSTG
IS
TC = +25°C
TC = +25°C
TC = +100°C
(free air)
°C
mJ
mJ
W
W
V dc
A dc
A dc
A dc
(1 die)
(4 die)
N-channel P-channel
N-channel
P-channel
N-channel
P-channel
1.4
2.5
±20
1.0
.6
1.0
75
.14
.75
.5
.75
55 to +150
RθJC
Max rDS(on) (5)
RθJA2
RθJA1
IAR
IDM (4)
max
max
max
VGS = 10 V dc, ID = ID2
(1 die)
(4 die)
TJ = +25°C
TJ = +150°C
°C/W
Ω
Ω
°C/W
°C/W
A
A (pk)
N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel
1.0
4.0
0.7
1.4
1.4
2.5
90
50
17
.75
3.0
See footnotes on next page.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil.
AMSC N/A
FSC 5961
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