MILPRF19500/598C
4.3.1 Gate stress test. Apply VGS = +30 V minimum for t = 250 µs minimum.
4.3.2 Single pulse avalanche energy (EAS). The single pulse avalanche energy capability shall be determined in
accordance with method 3470 of MILSTD750. The following details shall apply:
a.
Peak current, IAS
ID1.
10 V.
b.
Peak gate voltage, VGS
25 ≤ RGS ≤ 200Ω.
c.
Gate to source resistor, RGS
+25°C +10, 5°C.
d.
Initial case temperature
2EAS VBR -VDD
2
mH minimum.
e.
Inductance
(I D1) VBR
f.
Number of pulses to be applied
1 pulse minimum.
Supply voltage (VDD)
25 V minimum.
g.
4.3.3 Thermal impedance (ĆVSD measurements). The ĆVSD measurements shall be performed in accordance with
method 3161 of MILSTD750. The ĆVSD conditions (IH and VH) and maximum limit shall be derived by each vendor
from the thermal response curves (see figure 3). The ĆVSD measurement and conditions for each device in the
qualification lot shall be submitted (read and record) in the qualification report. The chosen ĆVSD shall be considered
final after the manufacturer has had the opportunity to test five consecutive lots. The following parameter
measurements shall apply:
IM measuring current
10 mA.
a.
IH drain heating current
0.15 A minimum.
b.
tH heating time
100 ms.
c.
VH drain-source heating voltage
15 V minimum.
d.
30 to 60 µs.
tMD measurement time delay
e.
10 µs maximum.
tSW sample window time
f.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MILPRF19500, and as
specified herein. Alternate flow is allowed for quality conformance inspection in accordance with appendix E of
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table EV of
MILPRF19500, and table I herein. End-point electrical measurements shall be in accordance with the applicable
steps of table II herein.
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