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MIL-PRF-19500-598 Semiconductor Device, Transistors, Quad, Field Effect, P-Channel And N-Channel, Silicon, Type 2N7336, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each device type as specified in MIL?√PRF?√19500.

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MIL­PRF­19500/598C
TABLE I. Group A inspection ­ Continued.
Limit
Inspection 1/
Unit
Symbol
Max
Min
Method
Conditions
Subgroup 3 ­ Continued
Static drain to source
3421
Bias condition A, VGS = 10 V dc,
rDS(on)2
on-state resistance
ID = rated ID2, pulsed (see 4.5.1)
Ω
N-channel
1.4
Ω
P-channel
2.3
VDS ≥ VGS, ID = 0.25 mA
Gate to source voltage
3403
VGS(th)2
1.0
V dc
(threshold)
TC = TJ = ­55°C
Low temperature operation:
VDS ≥ VGS, ID = 0.25 mA
Gate to source voltage
3403
VGS(th)3
5.0
V dc
(threshold)
Subgroup 4
Switching time test
3472
ID = rated ID1; VGS = 10 V dc,
RG = 7.5 Ω; VDD = 50 percent of
V(BR)DSS
Turn-on delay time
td(on)
N-channel
20
ns
P-channel
30
ns
Rise time
ns
tr
N-channel
25
ns
P-channel
60
ns
Turn-off delay time
td(off)
N-channel
40
ns
P-channel
70
ns
Fall time
tf
N-channel
40
ns
P-channel
80
ns
See footnote at end of table.
11



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