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MIL-PRF-19500-598 Semiconductor Device, Transistors, Quad, Field Effect, P-Channel And N-Channel, Silicon, Type 2N7336, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each device type as specified in MIL?√PRF?√19500.

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MIL�PRF�19500/598C

TABLE I. Group A inspection � Continued.

Limit

MIL�STD�750

Inspection 1/

Unit

Symbol

Max

Min

Method

Conditions

Subgroup 5

Single pulse unclamped

3470

See 4.3.2, n = 116, c = 0

EAS

inductive switching 3/

Electrical measurements

See subgroup 2 of this table

Safe operating area test for

3474

VDS = 80 percent of rated V(BR)DSS,

power MOSFETs

tp = 10 ms, (see figure 4)

N-channel

ID = 0.25 A

P-channel

ID = 0.5 A

Electrical measurements

See subgroup 2 of this table and

table II, step 7

Subgroup 6

Not applicable

Subgroup 7

Gate charge

3471

Condition B

On-state gate charge

Qg(on)

Gate to source charge

Qgs

N-channel

7.5

P-channel

7.0

Gate to drain charge

Qgd

N-channel

7.5

P-channel

8.0

Condition A, di/dt ≤ �100 A/�s,

Reverse recovery time

3473

trr

200

VDD ≤ 30 V, ID = ID1, (see 1.3)

For sampling plan, see MIL�PRF�19500.

This test is required for the following end-point measurement only (not intended for screen 9, 11, or 13): JANS,

table E�VIA of MIL�PRF�19500, group B, subgroups 3 and 4; JAN, JANTX, and JANTXV, table E�VIA of

MIL�PRF�19500, group B, subgroups 2 and 3; and table E�VII of MIL�PRF�19500, group C, subgroup 6, and

table E�IX of MIL�PRF�19500, group E, subgroup 1.

This test need not be performed in group A if performed in screening.