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MIL-PRF-19500-598 Semiconductor Device, Transistors, Quad, Field Effect, P-Channel And N-Channel, Silicon, Type 2N7336, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each device type as specified in MIL?√PRF?√19500.

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. . .
MIL­PRF­19500/598C
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse response measurements. Conditions for pulse response measurement shall be as specified in section
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method
3161 of MIL­STD­750. RθJA1 maximum = 90°C/W. RθJA1 shall be performed on each die. The following details
shall apply:
a.
IM measuring current
10 mA.
IH drain heating current
0.15 A minimum.
b.
Steady-state (see method 3161 of MIL­STD­750 for definition).
tH heating time
c.
VH drain-source heating voltage
15 V minimum.
d.
30 to 60 µs.
tMD measurement time delay
e.
10 µs maximum.
tSW sample window time
f.
9



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