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MIL-PRF-19500-598 Semiconductor Device, Transistors, Quad, Field Effect, P-Channel And N-Channel, Silicon, Type 2N7336, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each device type as specified in MIL?√PRF?√19500.

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MIL­PRF­19500/598C
TABLE II. Group A, B, C, and E electrical end-point measurements. 1/ 2/ 3/ 4/ 5/
Limits
Step
Inspection
Symbol
Unit
Method
Conditions
Min
Max
1
Breakdown voltage
3407
Bias condition C;
V(BR)DSS
100
V dc
drain to source
VGS = 0 V, ID = 1.0 mA dc
VDS ≥ VGS, ID = 0.25 mA dc.
2
Gate to source
3403
VGS(th)1
2.0
4.0
V dc
voltage (threshold)
3
Gate current
3411
Bias condition C;
IGSS1
±100
nA dc
VGS = ±20 V dc
µA dc
4
Drain current
3413
Bias condition C; VGS = 0 V dc,
IDSSS1
25
VDS = 80 percent of rated VDS
Ω
5
Static drain to source
3421
Bias condition A;
rDS(on)1
on-state resistance
VGS = 10 V dc,
pulsed (see 4.5.1); ID = ID2
N-channel
0.7
P-channel
1.4
6
Forward voltage
4011
Pulsed (see 4.5.1)
VSD
V
VG = 0 V; ID = ID1
N-channel
1.5
P-channel
5.5
ĆVSD
7
Thermal response
3161
See 4.3.3
1/
The electrical measurements for group B, quality level JANS, shall be as follows:
a.  In addition to the measurements specified for subgroup 3 of table E­VIA of MIL­PRF­19500, the
measurements of steps 1, 2, 3, 4, 5, 6 and 7 shall also be taken.
b.  In addition to the measurements specified for subgroup 5 of table E­VIA of MIL­PRF­19500, the
accelerated steady state gate stress of steps 1, 2, 3, 4, 5 and 6 shall also be taken.
c.  In addition to the measurements specified for subgroup 5 of table E­VIA of MIL­PRF­19500, the
accelerated steady state reverse bias of steps 1, 2, 3, 4, 5 and 6 shall also be taken. No more than 15
percent of the sample shall be permitted to have a ĆVBR(DSS) shift of more than 10 percent and ĆIDSS greater
than 50 µA.
2/
The electrical measurements for group B, quality levels JAN, JANTX and JANTXV shall be as follows:
a.  In addition to the measurements specified for subgroup 2 of table E­VIB of MIL­PRF­19500, the
measurements of steps 1, 2, 3, 4, 5, 6 and 7 shall also be taken.
b.  In addition to the measurements specified for subgroup 3 of table E­VIB of MIL­PRF­19500, the
accelerated steady state gate stress of steps 1, 2, 3, 4, 5 and 6 shall also be taken.
c.  In addition to the measurements specified for subgroup 3 of table E­VIB of MIL­PRF­19500, the
accelerated steady state reverse bias of steps 1, 2, 3, 4, 5 and 6 shall also be taken.
13



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