MIL-PRF-19500-598 Semiconductor Device, Transistors, Quad, Field Effect, P-Channel And N-Channel, Silicon, Type 2N7336, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for quad N-channel and P-channel, enhancement- mode, MOSFET, power transistor, with avalanche energy ratings \(EAS and EAR\) and maximum avalanche current \(IAR\). Four levels of product assurance are provided for each device type as specified in MIL?√PRF?√19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL�PRF�19500/598C

TABLE II. Group A, B, C, and E electrical end-point measurements � Continued.

The electrical measurements for group C, shall be as follows:

a. In addition to the measurements specified for subgroup 2 of table E�VII of MIL�PRF�19500, the

measurements of steps 1, 2, 3, 4, 5, 6 and 7 shall also be taken.

b. In addition to the measurements specified for subgroup 3 of table E�VII of MIL�PRF�19500, the

measurements of step 1, 2, 3, 4, 5 and 6 shall also be taken.

c. In addition to the measurements specified for subgroup 6 of table E�VII of MIL�PRF�19500, the steady

state gate stress measurements of step 1, 2, 3, 4, 5 and 6 shall also be taken.

d. In addition to the measurements specified for subgroup 6 of table E�VII of MIL�PRF�19500, the steady

state reverse bias measurements of step 1, 2, 3, 4, 5 and 6 shall also be taken.

The electrical measurements for group E, all quality levels, shall be as follows:

a. In addition to the measurements specified for subgroup 1 of table E�IX of MIL�PRF�19500, the

measurements of steps 1, 2, 3, 4, 5, 6 and 7 shall also be taken.

b. In addition to the measurements specified for subgroup 2 of table E�IX of MIL�PRF�19500, the

measurements of steps 1, 2, 3, 4, 5 and 6 shall also be taken.

Devices which exceed the table I (group A) limits for this test shall not be acceptable.