MIL-PRF-19500-613 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N7373, Jan, Jantx, Jantxv, Jans And Jansm, D, P, L, R, F, G, And HThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/613E

TABLE I. Group A inspection - Continued.

MIL-STD-750

Limits

Symbol

Unit

Inspection 1/

Method

Conditions

Min

Max

Subgroup 5

Safe operating area

3055

Pre-pulse condition for each test:

VCE = 0; IC = 0; TC = +25�C

(continuous dc)

Pulse condition for each test:

tp = 1 second, 1 cycle

TC = +25�C, (see figure 3)

Test 1

VCE = 12 V dc; IC = 5 A dc

Test 2

VCE = 32 V dc; IC = 1.5 A dc

Test 3

VCE = 80 V dc; IC = 100 mA dc

Safe operating area

TC = +25�C; RBB1 = 10 ohms;

(unclamped

RBB2 = 100 ohms; L = 0.3 mH;

inductive)

RL = 0.1 ohms; VCC = 10 V dc;

ICM = 10 A dc; (see figure 4)

Electrical measurements

Table I, subgroup 2

Subgroups 6 and 7

Not applicable

For sampling plan, see MIL-PRF-19500.

This test required for the following end-point measurements only:

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group B, subgroups 3 and 4 (JANS).

Group C, subgroup 2 and 6.

Group E, subgroup 1.