MIL-PRF-19500-613 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N7373, Jan, Jantx, Jantxv, Jans And Jansm, D, P, L, R, F, G, And HThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/613E

NOTES:

1. Vgen is -30 pulse (from 0 V) into a 50 ohm termination.

2. The Vgen waveform is supplied by a generator with the following characteristics: tr ≤ 15 ns, tf = 15

ns,ZOUT = 50 ohm, duty cycle ≤ 2 percent.

3. Waveforms are monitored on an oscilloscope with the following characteristics: tr ≤ 15 ns, RIN ≥ 10 MΩ,

CIN ≤ 11.5 pF.

3. Resistors shall be noninductive types.

4. The dc power supplies may require additional bypassing in order to minimize ringing.

FIGURE 2. Switching time test circuit.