MIL-PRF-19500-613 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N7373, Jan, Jantx, Jantxv, Jans And Jansm, D, P, L, R, F, G, And HThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/613E

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before

contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500.

3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be

as specified on figure 1. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that

contain a minimum of 90 percent AL2O3 (ceramic). Examples of such construction techniques are metallized ceramic

eyelets or ceramic walled packages.

3.4.1 Lead finish and formation. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500,

and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition requirements

(see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in

accordance with table E-IV, screen 14, of MIL-PRF-19500.

3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test

levels shall be as defined in MIL-PRF-19500.

3.6 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator "M", "D",

"P", "L", "R", "F", "G", or "H" shall immediately precede (or replace) the device "2N" identifier (depending upon degree

of abbreviation required).

3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

Qualification inspection (see 4.2).

Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.