MIL-PRF-19500-613 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N7373, Jan, Jantx, Jantxv, Jans And Jansm, D, P, L, R, F, G, And HThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/613E

TABLE III. Group E inspection (all quality levels) - for qualification and re-qualification only.

MIL-STD-750

Inspection

Sample plan

Method

Conditions

45 devices

Subgroup 1

c=0

Temperature cycling

1051

500 cycles.

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 2

45 devices

c=0

Test temperature = +125�C; VCB = 80 percent rated;

Blocking life

1048

T = 1,000 hours.

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 4

Sample size

N/A

Thermal impedance curves

See MIL-PRF-19500.

Subgroup 8

45 devices

c=0

Condition B.

Reverse stability

1033