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MIL-PRF-19500-613 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N7373, Jan, Jantx, Jantxv, Jans And Jansm, D, P, L, R, F, G, And HThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/613E

TABLE I. Group A inspection.

MIL-STD-750

Limits

Symbol

Unit

Inspection 1/

Min

Max

Method

Conditions

Subgroup 1

Visual and mechanical

2071

examination

Subgroup 2

�C/W

Thermal impedance 2/

3131

See 4.3.2

ZθJX

Collector to emitter

3011

Bias condition D; IC = 100 mA dc,

V(BR)CEO

V dc

breakdown voltage

IB = 0, pulsed (see. 4.5.1)

�A dc

Collector to emitter

3041

Bias condition C;

ICES1

1.0

VCE = 60 V dc; V

cutoff current

BE = 0

Collector to emitter

3041

Bias condition C;

ICES2

1.0

mA dc

VCE = 100 V dc; V

cutoff current

BE = 0

�A dc

Collector to emitter

3041

Bias condition D;

ICEO

VCE = 40 V dc; I

cutoff current

B=0

�A dc

Emitter to base

3061

Bias condition D;

IEBO1

1.0

VEB = 4 dc; I

cutoff current

C=0

Emitter to base

3061

Bias condition D;

IEBO2

1.0

mA dc

VEB = 5.5 dc; I

cutoff current

C=0

Forward-current

3076

VCE = 5.0 V dc; IC = 50 mA dc;

hFE1

transfer ratio

pulsed (see 4.5.1)

Forward-current

3076

VCE = 5.0 V dc; IC = 2.5 A dc;

hFE2

200

transfer ratio

pulsed (see 4.5.1)

Forward-current

3076

VCE = 5.0 V dc; IC = 5.0 A dc;

hFE3

transfer ratio

pulsed (see 4.5.1)

Base to emitter

3066

Test condition B; VCE = 5.0 V dc, IC

VBE

1.45

V dc

non-saturated voltage

= 2.5 A dc, pulsed (see 4.5.1)

Base to emitter

3066

Test condition A; IC = 2.5 A dc

VBE(SAT)1

1.45

V dc

saturated voltage

IB = 250 mA dc, pulsed (see 4.5.1)

Base to emitter

3066

Test condition A; IC = 5.0 A dc

VBE(SAT)2

2.2

V dc

saturated voltage

IB = 500 mA dc, pulsed (see 4.5.1)

Collector to emitter

3071

IC = 2.5 A dc; IB = 250 mA dc;

VCE(sat)1

0.75

V dc

saturated voltage

pulsed (see 4.5.1)

Collector to emitter

1.5

V dc

VCE(sat)2

IC = 5.0 A dc; IB = 500 mA dc;

saturated voltage

3071

pulsed (see 4.5.1)

See footnotes at end of table.