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MIL-PRF-19500-613 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N7373, Jan, Jantx, Jantxv, Jans And Jansm, D, P, L, R, F, G, And HThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/613E

TABLE II. Group D inspection.

MIL-STD-750

Limits

Symbol

Unit

Inspection 1/ 2/ 3/

Min

Max

Method

Conditions

Subgroup 1 4/

Neutron irradiation

1017

Neutron exposure VCES = 0 V

Collector to emitter

3011

Bias condition D; IC = 100 mA dc,

V(BR)CEO

V dc

breakdown voltage

IB = 0, pulsed (see. 4.5.1)

�A dc

Collector to emitter

3041

Bias condition C;

ICES1

2.0

VCE = 60 V dc; V

cutoff current

BE = 0

Collector to emitter

3041

Bias condition C;

ICES2

2.0

mA dc

VCE = 100 V dc; V

cutoff current

BE = 0

�A dc

Collector to emitter

3041

Bias condition D;

ICEO

100

VCE = 40 V dc; I

cutoff current

B=0

�A dc

Emitter to base

3061

Bias condition D;

IEBO1

2.0

VEB = 4 dc; I

cutoff current

C=0

Emitter to base

3061

Bias condition D;

IEBO2

2.0

mA dc

VEB = 5.5 dc; I

cutoff current

C=0

Forward-current

3076

VCE = 5.0 V dc; IC = 50 mA dc;

[hFE1] 5/

[25]

transfer ratio

pulsed (see 4.5.1)

Forward-current

3076

VCE = 5.0 V dc; IC = 2.5 A dc;

[hFE2] 5/

[35]

200

transfer ratio

pulsed (see 4.5.1)

Forward-current

3076

VCE = 5.0 V dc; IC = 5.0 A dc;

[hFE3] 5/

[20]

transfer ratio

pulsed (see 4.5.1)

Base to emitter

3066

Test condition B; VCE = 5.0 V dc, IC

VBE

1.67

V dc

non-saturated voltage

= 2.5 A dc, pulsed (see 4.5.1)

Base to emitter

3066

Test condition A; IC = 2.5 A dc

VBE(SAT)1

1.67

V dc

saturated voltage

IB = 250 mA dc, pulsed (see 4.5.1)

Base to emitter

3066

Test condition A; IC = 5.0 A dc

VBE(SAT)2

2.53

V dc

saturated voltage

IB = 500 mA dc, pulsed (see 4.5.1)

Collector to emitter

3071

IC = 2.5 A dc; IB = 250 mA dc;

VCE(sat)1

0.86

V dc

saturated voltage

pulsed (see 4.5.1)

Collector to emitter

3071

1.73

V dc

IC = 5.0 A dc; IB = 500 mA dc;

VCE(sat)2

saturated voltage

pulsed (see 4.5.1)

See footnotes at end of table.