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MIL-PRF-19500-613 Semiconductor Device, Transistor, Npn, Silicon, Power, Type 2N7373, Jan, Jantx, Jantxv, Jans And Jansm, D, P, L, R, F, G, And HThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS product assurance level. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/613E

TABLE I. Group A inspection - Continued.

MIL-STD-750

Limits

Symbol

Unit

Inspection 1/

Method

Conditions

Min

Max

Subgroup 3

TA = +150�C

High-temperature

operation:

�A dc

Collector to emitter

3041

Bias condition A; VCE = 60 V dc V

ICEX

500

cutoff current

BE(OFF) = +2 V dc

TA = -55�C

Low-temperature

operation:

Forward-current

VCE = 5.0 V dc; IC = 2.5 A dc;

hFE4

transfer ratio

pulsed (see 4.5.1)

Subgroup 4

Common emitter,

3076

VCE = 5 V dc; IC = 100 mA dc;

hfe

small-signal short-

f = 1 kHz

circuit forward-

current transfer

ratio

Magnitude of common

3206

VCE = 5 V dc; IC = 500 mA dc;

|hfe|

emitter small-signal

f = 10 MHz

short-circuit forward-

current transfer ratio

Open circuit output

3236

VCB = 10 V dc; IE = 0;

Cobo

250

capacitance

100 kHz ≤ f ≤ 1 MHz

�s

Switching time

3251

IC = 5 A dc; IB1 = 500 mA dc

ton

0.5

�s

1.4

IB2 = -500 mA dc

�s

0.5

VBE(off) = 3.7 V dc

1.5

�s

RL = 6 Ω; (see figure 2)

toff

See footnotes at end of table.