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MIL-PRF-19500-614 Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7380 And 2N7381, Jantxv, M, D, R, F, G, And H And Jans, M, D, R, F, G, And HThis specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/614J
TABLE I. Group A inspection - Continued.
Inspection
Limits
Symbol
Unit
1/
Method
Condition
Min
Max
Subgroup 3
TA = +125°C
High temperature
operation:
Bias condition C, VGS = ±20 V dc,
±200
Gate current
3411
IGSS2
nA dc
VDS = 0
Drain current
3413
Bias condition C, VGS = 0,
IDSS3
0.25
mA dc
VDS = 80 percent of rated VDS
Static drain to source
3421
VGS = 12 V dc, pulsed (see 4.5.1),
rDS(on)3
on-state
ID = rated ID2
Ω
2N7380
0.35
Ω
2N7381
0.75
VDS ≥ VGS, ID = 1.0 mA dc
Gate to source voltage
3403
VGS(th)2
1.0
V dc
(threshold)
TA = -55°C
Low temperature
operation:
VDS ≥ VGS, ID = 1.0 mA dc
Gate to source voltage
3403
VGS(th)3
5.0
V dc
(threshold)
Subgroup 4
Switching time test
3472
ID = rated ID1, VGS = 12 V dc, gate
drive impedance = 7.5 Ω, VDD = 50
percent of VBR(DSS)
Turn-on delay time
td(on)
25
ns
Rise time
tr
2N7380
60
ns
2N7381
50
ns
Turn-off delay time
td(off)
2N7380
40
ns
2N7381
70
ns
Fall time
tf
2N7380
30
ns
2N7381
60
ns
See footnotes at end of table.
10



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