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MIL-PRF-19500-614 Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7380 And 2N7381, Jantxv, M, D, R, F, G, And H And Jans, M, D, R, F, G, And HThis specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/614J
* 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see table E-IV
(1) (2)
JANS level
JANTXV level
Gate stress test (see 4.3.1)
Gate stress test (see 4.3.1)
(3)
(3)
Method 3470 of MIL-STD-750. (see
Method 3470 of MIL-STD-750. (see 4.3.2)
(3) 3c
Method 3161 of MIL-STD-750 (see 4.3.3)
Method 3161 of MIL-STD-750 (see 4.3.3)
9
IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I
Not applicable
herein
10
Method 1042 of MIL-STD-750, test
Method 1042 of MIL-STD-750, test
condition B
condition B
11
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
Subgroup 2 of table I herein.
Subgroup 2 of table I herein.
ĆIGSSF1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
ĆIDSS1 = ±25 ΅A dc or ±100 percent of
initial value, whichever is greater.
12
Method 1042 of MIL-STD-750, test
Method 1042 of MIL-STD-750, test
condition A
condition A
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Subgroup 2 and 3 of table I herein.
Subgroup 2 of table I herein.
ĆIGSSF1 = ±20 nA dc or ±100 percent of
ĆIGSSF1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of
ĆIGSSR1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIDSS1 = ±25 ΅A dc or ±100 percent of
ĆIDSS1 = ±25 ΅A dc or ±100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆrDS(on)1 = ±20 percent of initial value.
ĆrDS(on)1 = ±20 percent of initial value.
ĆVGS(th)1 = ±20 percent of initial value.
ĆVGS(th)1 = ±20 percent of initial value.
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For TO­257AA packages: Method 1081
For TO­257AA packages: Method 1081
of MIL-STD-750 (see 4.3.4), Endpoints:
of MIL-STD-750 (see 4.3.4), Endpoints:
Subgroup 2 of table I herein
Subgroup 2 of table I herein
(1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.
(2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1 shall be invoked.
(3) Shall be performed anytime after temperature cycling, screen 3a; JANTXV level does not need to be
repeated in screening requirements.
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