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MIL-PRF-19500-614 Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7380 And 2N7381, Jantxv, M, D, R, F, G, And H And Jans, M, D, R, F, G, And HThis specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/614J
4.3.1 Gate stress test. Apply VGS = ±30 V minimum for t = 250 µs minimum.
4.3.2 Single pulse avalanche energy (EAS).
Peak current (IAS)............................................. ID1.
a.
Peak gate voltage (VGS)................................... 12 V.
b.
Gate to source resistor (RGS) ........................... 25 ≤ RGS ≤ 200 Ω.
c.
Initial case temperature ................................... +25°C +10°C, -5°C.
d.
Inductance .................................................... 2E  AS  VBR - VDD mH minimum.
e.

(I  D1 )  
2
VBR
f.
Number of pulses to be applied ....................... 1 pulse minimum.
Supply voltage ................................................. VDD = 50 V, or 25 V for 100 V devices.
g.
4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).
Measurement delay time (tMD) = 70 µs max. See table III, group E, subgroup 4 herein.
*
4.3.4 Dielectric withstanding voltage.
a.
Magnitude of test voltage....................................800 V dc.
b.
Duration of application of test voltage....................15 seconds (min).
c.
Points of application of test voltage.......................All leads to case (bunch connection).
d.
Method of connection.........................................Mechanical.
e.
Kilovolt-ampere rating of high voltage source..........1,200 V/1.0 mA (min).
f.
Maximum leakage current....................................1.0 mA.
g.
Voltage ramp up time....................................................500 V/second
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
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