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MIL-PRF-19500-614 Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon, Types 2N7380 And 2N7381, Jantxv, M, D, R, F, G, And H And Jans, M, D, R, F, G, And HThis specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/614J
TABLE II. Group D inspection - Continued.
Pre-irradiation
Post-irradiation
Inspection
Symbol
limits
limits
Unit
1/ 2/ 3/
Method
Conditions
M, D, and R F, G, and H 4/ M, D, and R F, G, and H 4/
Min
Max
Min
Max
Min
Max
Min
Max
TC = +25°C
Subgroup 2
- Continued
Drain current 3413 VGS = 0,
IDSS
bias condition C,
VDS = 80 percent
of rated VDS (pre-
irradiation)
µA dc
2N7380
25
25
25
50
µA dc
2N7381
25
25
25
50
Static drain
3405 VGS = 12 V,
VDS(ON)
condition A
to source
pulsed, see 4.5.1.
on-state
voltage
ID = ID2
2N7380
1.638
1.638
1.638
2.184
V dc
2N7381
2.4
2.4
2.4
3.18
V dc
Forward
4011 VGS = 0, ID = ID1,
VSD
bias condition C
voltage
source
drain diode
2N7380
1.8
1.8
1.8
1.8
V
2N7381
1.4
1.4
1.4
1.4
V
For sampling plan, see MIL-PRF-19500.
1/
2/
Separate samples shall be pulled for each bias.
3/
Group D qualification may be performed anytime prior to lot formation. Wafers qualified to these group D QCI
requirements may be used for any other specification sheet utilizing the same die design.
4/
The "H" designation represents devices which pass end-points at M, D, R, F, G, and H designated total-
ionizing-dose (TID).
13



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